| PART |
Description |
Maker |
| GS71116ATP-8I |
8ns 64K x 16 1Mb asynchronous SRAM
|
GSI Technology
|
| GS71116TJ GS71116TP GS71116TU |
(GS71116x) 64K x 16 1Mb Asynchronous SRAM
|
GSI Technology
|
| N01L63W2A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K x 16 bit
|
ON Semiconductor
|
| CY7C466A-10PTC CY7C464A-10PTC CY7C462A-15JC CY7C46 |
Asynchronous/ Cascadable 8K/16K/32K/64K x9 FIFOs
Asynchronous, Cascadable 8K/16K/32K/64K x9 FIFOs 64K X 9 OTHER FIFO, 10 ns, PDIP28
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| GS71116ATP GS71116ATP-10 GS71116ATP-10I GS71116ATP |
1Mb Asynchronous SRAM
|
http://
List of Unclassifed Manufacturers
ETC[ETC]
|
| N01L1618N1A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit
|
NanoAmp Solutions
|
| N01L83W2A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 8 bit
|
ON Semiconductor
|
| MCM67A618B MCM67A618BFN10 MCM67A618BFN12 MCM67A618 |
64K x 18 Bit Asynchronous/ Latched Address Fast Static RAM
|
MOTOROLA[Motorola, Inc]
|
| GS71208TP-8T GS71208TP-8 |
8ns 128K x 8 1Mb asynchronous SRAM
128K X 8 STANDARD SRAM, 8 ns, PDSO32 0.400 INCH, TSOP2-32
|
GSI Technology, Inc.
|
| MT58L32L32D MT58L32L36D MT58L64L18D |
32K x 36,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，双循环取消选择，同步脉冲静态存储器)
64K x 18, 3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，双循环取消选择，同步脉冲静态存储器)
32K x 32,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，双循环取消选择，同步脉冲静态存储器) 32KX82,3.3 O的流水线，双氰胺SyncBurst的SRAM兆，3.3V的输输出，流水线式，双循环取消选择，同步脉冲静态存储器
|
Micron Technology, Inc.
Micrel Semiconductor, Inc.
|
| BS616LV1013 BS616LV1013EIP70 BS616LV1013AC BS616LV |
Very Low Power/Voltage CMOS SRAM 64K X 16 bit 非常低功电压CMOS SRAM4K的16
Asynchronous 1M(64Kx16) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, Inc.
BSI[Brilliance Semiconductor]
|
